to-126 plastic-encapsulated trans istors bd135/bd137/BD139 transistor (npn) features power dissipation p cm: 1.25 w (tamb=25 ) collector current i cm: 1.5 a operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit bd135 45 bd137 60 collector-base breakdown voltage v (br)cbo ic= 100 a, i e =0 BD139 80 v bd135 45 bd137 60 collector-emitter breakdown voltage v (br)ceo ic= 30 ma, i b =0 BD139 80 v emitter-base breakdown voltage v (br)ebo i e = 100 a, i c =0 5 v collector cut-off current i cbo v cb = 30 v, i e =0 0.1 a emitter cut-off current i ebo v eb = 5 v, i c =0 10 a h fe(1) v ce = 2 v, i c = 5 ma 25 bd135 40 250 h fe(2) v ce = 2 v, i c = 150 ma bd137/BD139 40 160 dc current gain h fe(3) v ce = 2 v, i c = 500 ma 25 collector-emitter saturation voltage v ce(sat) i c = 500 ma, i b = 50 ma 0.5 v base-emitter voltage v be v ce = 2 v, i c = 500 ma 1 v classification of h fe(2) rank 6 10 16 range 40-100 63-160 100-250 1 2 3 to-126 1. emitter 2. collector 3. base transys electronics li m ite d
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